Силовой модуль IGBT SKM200GB123D

IGBT MODULE, HALF BRIDGE
Transistor Type IGBT Module
Transistor Polarity N Channel
Voltage, Vces 1200V
Current Ic Continuous a Max 200A
Voltage, Vce Sat Max 3V
Case Style SEMITRANS 3
Termination Type Screw
Collector-to-Emitter Breakdown Voltage 1200V
Current Ic Continuous b Max 180A
Current Ic av 200A
Current, Icm Pulsed 400A
External Depth 51.4mm
External Length / Height 30.5mm
Fixing Centres 93mm
Fixing Hole Diameter 6.4mm
Power, Pd 1380W
Power, Ptot 1380W
Temperature, Current 25 C
Time, Rise 100ns
Transistors, No. of 2
Width, External 105.4mm